page . 1 march 19,2012-rev.00 pjs50n03 features ? r ds(on) , v gs @10v,i d @3.1a< 57 m ? r ds(on) , v gs @4.5v,i d @2.8a< 94 m ? advanced trench process technology ? high density cell design for ultra low on-resistance ? specially designed for dc/dc converters ? low gate charge ? lead free in comply with eu rohs 2002/95/ec directives. ? green molding compound as per iec61249 std. . (halogen free) mechanical data ? case: sot-23 6l package ? terminals : solderable per mil-std-750,method 2026 ? apporx. weight : 0.0003 ounces, 0.0084grams ? marking : n03 30v n-channel enhancement mode mosfet maximum ratings and thermal characteristics (t a =25 o c unless otherwise noted ) notes: 1. mounted on 7.5cm 2 fr-4 pcb . parameter symbol limit units drain-source voltage v ds 30 v gate-source voltage v gs + 20 v continuous drain current steady-state t a =25 o ci d 2.9 a pulsed drain current i dm 16 a power dissipation (notes 1) steady-state t a =25 o cp d 0.7 w typical thermal resistance (notes 1) r ja 176 o c/w operating junction and storage temperature range t j ,t stg -55 to + 150 o c voltage 30 volts 2.9 amperes current
page . 2 march 19,2012-rev.00 pjs50n03 electrical characteristics (t a =25 o c unless otherwise noted ) parameter symbol test condition min. typ. max. units static drain-source breakdown voltage bv dss v gs =0v, i d =250 a30--v gate threshold voltage v gs(th) v ds =v gs , i d = 250 a 1.0 2.0 3.0 v drain-source on-state resistance r ds(on) v gs = 10v, i d = 3.1a - 2 7 5 7 m v gs = 4.5v, i d = 2.8a - 4 0 9 4 zero gate voltage drain current i dss v ds = 30v, v gs =0v - - 0.5 a gate -source leakage current i gss v gs = + 20v, v ds =0v - - + 100 na diode forward voltage v sd i s = 1.25a, v gs =0v - 0.9 1.2 v dynamic total gate charge q g v ds = 15v, i d = 3.1a v gs = 10v - 12.63 - nc gate-source charge q gs -2.25- gate-drain charge q gd -2.62- tur n-on d e la y ti me td on v ds = 15v , v gs = 10v, r g = 6 , r l = 5 -11.6- ns turn-off delay time td off - 35.2 - tur n-on ri s e ti m e t r - 19.6 - tur n-off f a ll ti m e t f -8 . 2- input capacitance c iss v ds = 15v, v gs =0v f=1.0mh z - 607 - pf output capacitance c oss -6 6- reverse transfer capacitance c rss -5 9-
page . 3 s istsnce vs. drain current fig.5 on-resistsnce vs. drain current i d =3.1a 0 100 200 300 400 500 0246810 v gs , gate-source voltage(v) r ds (on), on-resistance(m ? ) 30 40 50 60 70 80 90 100 0 2 4 6 8 10 12 14 16 18 20 i d , drain current(a) vgs=10v vgs=4.5v r ds (on), on resistance(m ? ) 0 2 4 6 8 10 12 14 16 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 v gs , gate-source voltage(v) t a =25 t a =125 i d , drain current(a) fig.3 drain current vs gate-source voltage 0 100 200 300 400 500 600 700 800 900 1000 0 5 10 15 20 25 v ds , drain-source voltage(v) c, capacitance(pf) ciss(pf) coss(pf) crss(pf) v gs =0v f=1mh z 0 4 8 12 16 012345 v ds , drain-source voltage(v) i ds , drain-source current(a) v gs =10v v gs =5v v gs =4v fig.2 drain-source current vs drain-source voltage fig.4 on-resistance vs drain current fig.5 on-resistance vs gate-source voltge 20 25 30 35 40 45 25 50 75 100 125 150 t j , junction temperature ( ) v gs =10v i d =3.1a r ds (on)- on-resistance(m ? ) fig.6 on-resistance vs junction temperature fig.1 capacitance variation r ating and characteristic curves v gs =1v,3v pjs50n03 0 d u f k 5 ( 9
page . 4 s r ating and characteristic curves fig.7 gate threshoid voltage vs junction temperature 0.0 2.0 4.0 6.0 8.0 10.0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 v sd , source-drain voltage(v) t j =75 t j =125 t j =25 t j =150 i s , source current(a ) fig.8 body diode forward voltage 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 25 50 75 100 125 150 t j , junction temperature( ) i ds =-250ua v gs ( th ), gate threshold voltage(v) pjs50n03 0 d u f k 5 ( 9
page . 5 mounting pad layout ? packing information t/r - 1 0 k per 13" plastic reel t/r - 3k per 7 plastic reel order information legal statement copyright panjit international, inc 2012 the information presented in this document is believed to be accurate and reliable. the specifications and information herein are subject to change without notice. pan jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. pan jit products are not authorized for use in life support devices or systems. pan jit does not convey any license under its patent rights or rights of others. pjs50n03 0 d u f k 5 ( 9 sot -23 6l 0.024 (0.60) 0.026 (0.67) 0.096 (2.43) 0.037 (0.95) 0.037 (0.95) unit inch(mm)
page . 6 for example : rb500v-40 _ r2 _ 00001 part no. serial number version code means hf packing size code means 13" packing type means t/r packing code xx version code xxxxx packing type 1 st code packing size code 2 nd code hf or rohs 1 st code 2 nd ~5 th code t/b a n/a 0 hf 0 serial number t/r r 7" 1 rohs 1 serial number b/p b 13" 2 t/p t 26mm x trr s 52mm y trl l pbcu u forming f pbcd d part no_packing code_version pj s50n03_r1_00001 pjs50n03_r2_00001 pjs50n03_00001 pjs50n03 march 19,2012-rev.00
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